Rehovot, Israel

Amir Holtzman

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Merck Patent Gmbh. Active years: 2023-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Amir Holtzman. Retrieved from https://idiyas.com/inventor/amir-holtzman-4vw74wr1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 5.1

ph-index = 1


Company Filing History:


Years Active: 2023-2024

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2 patents (USPTO):Explore Patents

Title: Amir Holtzman: Innovator in Semiconducting Nanosized Materials

Introduction

Amir Holtzman is a prominent inventor based in Rehovot, Israel. He has made significant contributions to the field of materials science, particularly in the synthesis of semiconducting nanosized materials. With a total of 2 patents to his name, Holtzman is recognized for his innovative approaches and methodologies.

Latest Patents

Holtzman's latest patents include a method for synthesizing a semiconducting nanosized material. This invention focuses on a novel approach to create materials that have potential applications in various electronic devices. The method enhances the efficiency and effectiveness of semiconducting materials, paving the way for advancements in technology.

Career Highlights

Holtzman is currently employed at Merck Patent GmbH, where he continues to push the boundaries of innovation in his field. His work has garnered attention for its practical applications and contributions to the advancement of materials science.

Collaborations

Throughout his career, Holtzman has collaborated with notable colleagues, including Inbal Davidi and David Mocatta. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Amir Holtzman stands out as a key figure in the realm of semiconducting materials. His innovative patents and collaborative efforts highlight his commitment to advancing technology and materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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