Gothenburg, Sweden

Amin Saleem Muhammad

This inventor holds 1 USPTO granted patent. Top assignee: Smoltek Ab. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Amin Saleem Muhammad. Retrieved from https://idiyas.com/inventor/amin-saleem-muhammad

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Innovations of Amin Saleem Muhammad

Introduction

Amin Saleem Muhammad is a notable inventor based in Gothenburg, Sweden. He has made significant contributions to the field of lithography through his innovative patent. His work focuses on creating high aspect ratio templates that are essential for nanoscale applications.

Latest Patents

Amin holds a patent titled "Template and method of making high aspect ratio template for lithography and use of the template for perforating a substrate at nanoscale." This invention involves a template and method for creating high aspect ratio templates, stamps, and imprinting at the nanoscale using nanostructures. The primary purpose of this technology is to facilitate lithography and enable the creation of perforations on various materials and products.

Career Highlights

Amin Saleem Muhammad is currently associated with Smoltek AB, a company that specializes in advanced nanotechnology solutions. His work at Smoltek AB has allowed him to push the boundaries of what is possible in the field of nanotechnology and lithography.

Collaborations

Amin has collaborated with notable colleagues, including David Brud and Jonas Berg. Their combined expertise has contributed to the advancement of innovative technologies in their respective fields.

Conclusion

Amin Saleem Muhammad's contributions to the field of lithography and nanotechnology are noteworthy. His innovative patent and work at Smoltek AB highlight his commitment to advancing technology at the nanoscale.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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