Allen Faber

Title: The Innovative Mind of Allen Faber

Introduction

Allen Faber is a notable inventor based in Vancouver, WA (US). He has made significant contributions to the field of memory technology, holding 2 patents that showcase his innovative approach to reconfiguring memory systems. His work has implications for both the efficiency and functionality of memory devices.

Latest Patents

Faber's latest patents include a method for reconfiguring a RAM to a ROM using layers of metallization. This invention outlines a process where a RAM is fabricated on a platform ASIC, with memory patterned using intersecting metal layers. The first metal layer consists of local core cell nodes, while the second layer comprises power and ground connections. The RAM can be transformed into a ROM by forming vias between the intersections of these metal layers, effectively connecting them.

Another significant patent is a method and circuit for matching sense amplifier trigger signal timing to data bit line separation timing in a self-timed memory array. This circuit includes a source of a self-timed word line signal and a transmission gate that propagates timing delays. It also features selectable self-timed pull-down core cells that sum the drive current to generate a sense amplifier trigger signal.

Career Highlights

Throughout his career, Allen Faber has worked with prominent companies such as LSI Corporation and LSI Logic Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in memory technology.

Collaborations

Faber has collaborated with talented individuals in the field, including Ghasi R Agrawal and Sifang Wu. These partnerships have likely enriched his work and led to innovative solutions in memory design.

Conclusion

Allen Faber's contributions to memory technology through his patents and career experiences highlight his role as an influential inventor. His innovative methods for reconfiguring memory systems demonstrate the potential for advancements in this critical area of technology.