Allan D Danner

Title: The Innovations of Allan D Danner

Allan D Danner is a notable inventor based in Pasadena, CA. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on the development of advanced semiconductor laser diodes.

Latest Patents

Allan D Danner holds a patent for a semiconductor laser diode. This innovative device features a short period substantially intrinsic superlattice structure. The superlattice is constructed from alternating layers of substantially intrinsic direct and indirect semiconductor material. Semiconductor electrodes, one being p-type and the other being n-type, are formed adjacent to respective opposite lateral surfaces of the superlattice. These electrodes are biased to inject carriers into the superlattice. At the top and bottom surfaces of the superlattice, a semiconductor layer is formed, with one layer being n-type and the other being p-type. These layers are biased by an intermittent voltage to develop an intermittent field across the superlattice. This field transforms the indirect material to direct material. The recombination of carriers in the quantum well, when the material becomes direct, develops optical radiation to be emitted.

Career Highlights

Allan D Danner is associated with Applied Solar Energy Corporation. His work at the company emphasizes the importance of innovative solutions in the renewable energy sector. His contributions have helped advance the technology behind semiconductor devices.

Collaborations

Due to space constraints, the collaborations section will be omitted.

Conclusion

Allan D Danner's work in semiconductor laser diodes showcases his innovative spirit and dedication to advancing technology. His contributions continue to impact the field significantly.