This inventor holds 1 USPTO granted patent. Top assignee: The Secretary for Defence in Her Britannic Majesty's Government of the. Active years: 1995.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1995
Title: The Innovations of Alison M Hodge
Introduction
Alison M Hodge is a notable inventor based in Worcestershire, GB. She has made significant contributions to the field of technology, particularly in the area of silicon materials. Her work has implications for various applications in electronics and materials science.
Latest Patents
Alison M Hodge holds a patent for a "Method of making silicon-on-porous-silicon by ion implantation." This innovative method showcases her expertise in semiconductor technology and her commitment to advancing the field.
Career Highlights
Alison currently works for the Secretary for Defence in Her Britannic Majesty's Government. Her role in this esteemed organization highlights her dedication to applying her inventions for the benefit of national interests and technological advancement.
Collaborations
Throughout her career, Alison has collaborated with various professionals, including her coworker John M Keen. These partnerships have likely enriched her work and contributed to her innovative projects.
Conclusion
Alison M Hodge is a pioneering inventor whose work in silicon technology has the potential to influence future advancements in the field. Her contributions are a testament to her skills and dedication to innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile