Kuna, ID, United States of America

Alicia J Lustgraaf

USPTO Granted Patents = 1 

Average Co-Inventor Count = 10.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Alicia J Lustgraaf: Innovator in Semiconductor Processing

Introduction

Alicia J Lustgraaf is a notable inventor based in Kuna, ID (US). She has made significant contributions to the field of semiconductor processing, particularly in the management of hydrogen in plasma deposited films. Her innovative work has led to the development of methods that enhance the efficiency and effectiveness of semiconductor manufacturing.

Latest Patents

Alicia holds a patent titled "Hydrogen management in plasma deposited films." This patent outlines exemplary methods of semiconductor processing that include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. The substrate is maintained at a temperature below or about 450° C, and the methods involve striking a plasma of the silicon-containing precursor. The result is the formation of a layer of amorphous silicon on a semiconductor substrate, characterized by less than or about 3% hydrogen incorporation. This innovation is crucial for improving the quality and performance of semiconductor devices.

Career Highlights

Alicia is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. Her role involves working on advanced technologies that drive the future of semiconductor manufacturing. With her expertise, she has contributed to the development of processes that are essential for producing high-performance electronic components.

Collaborations

Alicia collaborates with talented professionals in her field, including Rui Cheng and Diwakar N Kedlaya. These collaborations enhance the innovation process and contribute to the advancement of semiconductor technologies.

Conclusion

Alicia J Lustgraaf is a pioneering inventor whose work in hydrogen management in semiconductor processing is shaping the future of the industry. Her contributions are vital for the ongoing development of efficient and high-quality semiconductor devices.

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