The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
Jul. 19, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Rui Cheng, San Jose, CA (US);
Diwakar Kedlaya, San Jose, CA (US);
Karthik Janakiraman, San Jose, CA (US);
Gautam K. Hemani, San Jose, CA (US);
Krishna Nittala, San Jose, CA (US);
Alicia J. Lustgraaf, Kuna, ID (US);
Zubin Huang, Santa Clara, CA (US);
Brett Spaulding, Boise, ID (US);
Shashank Sharma, Fremont, CA (US);
Kelvin Chan, San Ramon, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by less than or about 3% hydrogen incorporation.