Alice Pei-Shan Hsieh

Title: The Innovative Contributions of Alice Pei-Shan Hsieh

Introduction

Alice Pei-Shan Hsieh is a prominent inventor based in Munich, Germany. She has made significant contributions to the field of semiconductor technology, holding a total of four patents. Her work focuses on the design and development of advanced power semiconductor devices.

Latest Patents

One of her latest patents is a power semiconductor device with a charge balance design. This invention involves a semiconductor body with first and second vertically spaced apart surfaces. A gate trench extends from the first surface towards the second surface, incorporating a gate electrode and a gate dielectric for electrical insulation. Additionally, a doped superjunction region is formed, which includes vertically extending doped pillars with varying conductivity types. Another notable patent is a power semiconductor device that features a semiconductor substrate with an edge termination region. This device includes non-metallic electrodes that are strategically placed in the edge termination region, ensuring effective electrical connections through metallic plugs.

Career Highlights

Alice has worked with leading companies in the semiconductor industry, including Infineon Technologies AG and Infineon Technologies Austria AG. Her experience in these organizations has allowed her to refine her expertise and contribute to groundbreaking innovations in power semiconductor technology.

Collaborations

Throughout her career, Alice has collaborated with notable colleagues such as Hans-Joachim Schulze and Philip Christoph Brandt. These partnerships have further enhanced her work and contributed to the advancement of semiconductor technologies.

Conclusion

Alice Pei-Shan Hsieh's innovative work in semiconductor technology has led to significant advancements in power semiconductor devices. Her contributions continue to influence the industry and pave the way for future innovations.