Company Filing History:
Years Active: 2017-2018
Title: The Innovative Contributions of Alice Pei-Shan Hsieh
Introduction
Alice Pei-Shan Hsieh is a prominent inventor based in Cambridge, GB. She has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. Her work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
Among her latest patents is a bipolar semiconductor device with multi-trench enhancement regions. This invention includes various implementations that enhance the functionality of bipolar semiconductor devices. The device features a drift region with a first conductivity type situated over an anode layer of an opposite conductivity type. It also incorporates control trenches and depletion trenches that optimize the device's performance.
Another notable patent is for a semiconductor device having a superjunction structure. This device includes a drift region of a first conductivity type and an anode region of a second conductivity type. The design allows for improved efficiency and performance by utilizing a superjunction structure that separates the inversion region from the enhancement region.
Career Highlights
Alice Hsieh works at Infineon Technologies Americas Corporation, where she continues to innovate in semiconductor technology. Her expertise and contributions have positioned her as a key figure in her field.
Collaborations
Alice has collaborated with notable colleagues such as Florin Udrea and Gianluca Camuso. These collaborations have further enriched her work and expanded the impact of her inventions.
Conclusion
Alice Pei-Shan Hsieh's innovative work in semiconductor technology exemplifies her dedication to advancing the field. Her patents reflect her commitment to enhancing device performance and efficiency.