The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Dec. 31, 2015
Infineon Technologies Americas Corp., El Segundo, CA (US);
Florin Udrea, Cambridge, GB;
Alice Pei-Shan Hsieh, Cambridge, GB;
Gianluca Camuso, Cambridge, GB;
Chiu Ng, El Segundo, CA (US);
Yi Tang, Torrance, CA (US);
Rajeev Krishna Vytla, Los Angeles, CA (US);
Infineon Technologies Americas Corp., El Segundo, CA (US);
Abstract
There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) having a deep superjunction structure. Such an IGBT includes a drift region having a first conductivity type situated over a collector having a second conductivity type. The IGBT also includes a gate trench extending through a base having the second conductivity type into the drift region. In addition, the IGBT includes a deep superjunction structure situated under the gate trench. The deep superjunction structure includes one or more first conductivity regions having the first conductivity type and two or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the two or more second conductivity regions configured to substantially charge-balance the deep superjunction structure.