Vilnius, Lithuania

Algirdas Kaskonas

This inventor holds 1 USPTO granted patent. Top assignee: International Rectifier Corporation. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Algirdas Kaskonas. Retrieved from https://idiyas.com/inventor/algirdas-kaskonas

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Algirdas Kaskonas: Semiconductor Resistor Invention

Introduction

Algirdas Kaskonas is an inventor associated with Vilnius, Lithuania. His patent work includes a semiconductor-based design for a low-resistance, high-current sense resistor.

Latest Patents

The available information lists one patent for Kaskonas: “High Current Sense Resistor and Process for Its Manufacture.” The invention describes forming a low-resistance resistor on a semiconductor die using conventional semiconductor processing techniques. One or two resistive layers are patterned into series and parallel sections connected to main terminals, while separate sense terminals provide an output related to the current flowing through the device. Fusible links allow the final resistance value to be trimmed.

Career Highlights

Kaskonas is associated with International Rectifier Corporation. His listed patent reflects work on semiconductor fabrication and current-sensing components. The supplied information identifies 1 patent.

Collaborations

Aldo Torti and Jonas Aleksandravicius are listed as Kaskonas’s coworkers. The available details do not specify their roles in the patent or the extent of their collaboration.

Conclusion

Algirdas Kaskonas’s documented invention applies semiconductor processing to a trimmable, high-current sense resistor, connecting his patent record with practical electronic component design.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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