Alexander Jansen

Title: Alexander Jansen: Semiconductor Interconnect Innovation

Introduction

Alexander Jansen is an inventor based in San Jose, California, whose patent work focuses on semiconductor interconnect structures. He is associated with Applied Materials, Inc. His portfolio includes 1 patent.

Latest Patents

Jansen’s patent, “Structures with Copper Doped Hybrid Metallization for Line and Via,” describes interconnect structures designed to achieve low resistivity and high dopant interfaces. In some embodiments, the structure includes an opening extending from an upper surface to an underlying copper layer. A tantalum nitride barrier and a cobalt or ruthenium liner are formed within the opening.

The design uses two copper layers with different dopant concentrations. The first layer fills the lower portion of the opening to form a via and has a dopant content of approximately 0.5 to 10 percent. The second layer fills the remaining opening and has a dopant content greater than zero and up to approximately 0.5 percent, lower than the first layer’s concentration.

Career Highlights

Jansen’s disclosed invention addresses materials and layer design in semiconductor interconnects, where electrical resistance and interface properties are important considerations. His work is associated with Applied Materials, Inc.

Collaborations

Jansen’s listed coworkers include Suketu Parikh and Joung Joo Lee. Their names are associated with his professional context, though the provided information does not specify their roles in the patent.

Conclusion

Alexander Jansen’s patent describes a copper-doped hybrid metallization approach for semiconductor lines and vias, combining layered materials and differing dopant concentrations to address interconnect performance.