Company Filing History:
Years Active: 1990
Title: Alex R Shimkunas: Innovator in Silicon Shadow Mask Technology
Introduction
Alex R Shimkunas is a notable inventor based in Palo Alto, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of high-resolution silicon shadow masks. His innovative approach has the potential to enhance various applications in electronics and optics.
Latest Patents
Shimkunas holds a patent for a "Method for making high resolution silicon shadow masks." This invention describes a process for creating a high-resolution shadow mask with low pattern distortion. The method involves forming a silicon membrane with a pattern of apertures etched through it by reactive ion etching, utilizing a silicon dioxide masking layer. The key to achieving low distortion over a large area is controlling the stress of both the membrane and the masking layer. This ensures that the stress relief during aperture formation remains negligible. The process also includes a p/n junction electrochemical etch-stop method to create a controlled stress silicon membrane, followed by coating it with a silicon dioxide layer and a photoresist layer for patterning.
Career Highlights
Alex R Shimkunas is currently employed at Nanostructures, Inc., where he continues to push the boundaries of innovation in semiconductor technology. His work has been instrumental in advancing the capabilities of silicon shadow masks, which are crucial for high-precision applications in the electronics industry.
Collaborations
Throughout his career, Shimkunas has collaborated with esteemed colleagues such as Philip E Mauger and Junling J Yen. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and expertise, further enhancing the impact of their collective work.
Conclusion
Alex R Shimkunas is a pioneering inventor whose contributions to the field of silicon shadow masks are noteworthy. His innovative methods and collaborative spirit continue to influence advancements in semiconductor technology.
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