Location History:
- I-95123- Catania, IT (2009)
- 95123 Catania, IT (2010)
- Catania, IT (2011)
Company Filing History:
3 out of 832,880 Years Active: 2009-2011
Title: Innovations of Alessandro Tumminia
Introduction
Alessandro Tumminia is a notable inventor based in Catania, Italy. He has made significant contributions to the field of memory cell programming, particularly in Flash memory technology. With a total of 3 patents to his name, Tumminia's work has advanced the efficiency and reliability of memory devices.
Latest Patents
One of Tumminia's latest patents is a method for programming memory cells, specifically of the Flash type. This method involves performing a verification with a first parallelism (M) to determine the state of a group of memory cells. Based on the verification results, a programming parallelism (np) is established, followed by the actual programming of the memory cells using this parallelism. Another significant patent is for a memory device with fail search and redundancy. This innovation allows an automatic redundancy system to utilize an existing microprocessor management system on chip. It autonomously conducts operations such as writing data in the memory array, verifying data read from the memory array, and substituting failed elements with equivalent redundancy structures. This architecture enhances the speed and efficiency of data collection related to memory failures.
Career Highlights
Throughout his career, Tumminia has focused on developing advanced technologies that improve memory cell performance. His innovative approaches have positioned him as a key figure in the field of memory technology.
Collaborations
Tumminia has collaborated with talented individuals such as Davide Torrisi and Edoardo Nocita. These partnerships have contributed to the successful development of his patented technologies.
Conclusion
Alessandro Tumminia's contributions to memory cell programming and redundancy systems highlight his innovative spirit and technical expertise. His patents reflect a commitment to advancing technology in the field of memory devices.