This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Infineon Technologies Austria Ag. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: The Innovative Contributions of Aleksander Hinz
Introduction
Aleksander Hinz is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly with his work on reverse conducting insulated gate bipolar transistors (RC-IGBTs). His innovative approach has led to advancements that are crucial for various applications in electronics.
Latest Patents
Hinz holds a patent for the RC-IGBT and its manufacturing method. This invention features a reverse conducting insulated gate bipolar transistor that includes an active area within a semiconductor body. The active area comprises an IGBT area, a diode area, and a transition area adjacent to the diode area. The design incorporates trenches extending into the semiconductor body and a drift region of a first conductivity type, which contains lifetime killing impurities in the transition area. Additionally, the active area includes a barrier region that enhances the performance of the device. The maximum doping concentration in this barrier region is significantly higher than that in the drift region, optimizing the functionality of the RC-IGBT.
Career Highlights
Aleksander Hinz is currently employed at Infineon Technologies Austria AG, where he continues to push the boundaries of semiconductor innovation. His work has not only contributed to the advancement of technology but has also positioned him as a key player in the industry.
Collaborations
Hinz collaborates with talented professionals such as Matteo Dainese and Ahmed Elsayed. These partnerships foster a creative environment that enhances the development of cutting-edge technologies.
Conclusion
Aleksander Hinz's contributions to the field of semiconductor technology, particularly through his patent for the RC-IGBT, demonstrate his innovative spirit and commitment to advancing electronic applications. His work at Infineon Technologies Austria AG and collaborations with esteemed colleagues further highlight his impact on the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile