Alek C Chen

Title: Alek C Chen: Innovator in Lithography Technologies

Introduction

Alek C Chen is a notable inventor based in Mount Kisco, NY (US). He has made significant contributions to the field of lithography, particularly in the development of methods and systems that enhance the precision of exposure gaps in lithographic processes. With a total of 2 patents to his name, Chen's work is recognized for its innovative approach to complex engineering challenges.

Latest Patents

Chen's latest patents include "In situ proximity gap monitor for lithography" and "Magnification correction for 1-X proximity X-Ray lithography." The first patent provides a method and system for determining an exposure gap between a mask and a resist material. It involves the use of gratings on the mask's structures to measure differences in locations, allowing for accurate extrapolation of the exposure gap. The second patent addresses the mechanical adjustments needed in X-ray lithography, utilizing torque to manipulate a membrane and design pattern for optimal results.

Career Highlights

Throughout his career, Alek C Chen has worked with various companies, including Loral Federal Systems Company. His experience in these organizations has contributed to his expertise in lithography and related technologies.

Collaborations

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Conclusion

Alek C Chen's contributions to lithography through his innovative patents demonstrate his commitment to advancing technology in this field. His work continues to influence the industry and inspire future innovations.