Location History:
- Hsinchu, TW (2018)
- Saratoga, CA (US) (2019 - 2021)
Company Filing History:
Years Active: 2018-2021
Title: Innovations of Albert Ying in Dual-Port Static Random-Access Memory
Introduction
Albert Ying is a notable inventor based in Saratoga, CA (US). He has made significant contributions to the field of memory architecture, particularly in dual-port static random-access memory (DP SRAM). With a total of 5 patents to his name, Ying's work has advanced the efficiency and functionality of memory systems.
Latest Patents
One of Ying's latest patents focuses on a flying and twisted bit line architecture for dual-port static random-access memory (DP SRAM). This innovative architecture features an array of memory cells organized in rows and columns, consisting of a first subarray and a second subarray. The design includes a first pair of complementary bit lines (CBLs) that extend along a column from one side of the array, terminating between the two subarrays. Additionally, a second pair of CBLs extends from the first side to the second side of the array, with stepped profiles between the subarrays. The architecture also incorporates third and fourth pairs of CBLs, which electrically couple to the memory cells in their respective subarrays.
Career Highlights
Albert Ying is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in enhancing the performance of memory systems, making them more efficient and reliable.
Collaborations
Ying collaborates with talented individuals such as Sahil Preet Singh and Jung-Hsuan Chen, contributing to a dynamic and innovative work environment.
Conclusion
Albert Ying's contributions to dual-port static random-access memory have established him as a key figure in the field of memory architecture. His innovative designs and collaborative efforts continue to push the boundaries of technology.