Alan J Tam

Title: Alan J Tam - Innovator in GMR Head Fabrication

Introduction

Alan J Tam is a notable inventor based in San Jose, California. He has made significant contributions to the field of technology, particularly in the area of data storage. His innovative work has led to the development of a unique method for fabricating a giant magnetoresistive (GMR) head.

Latest Patents

Alan J Tam holds a patent for a method of fabricating a GMR head. This invention involves forming a GMR head that includes a recess in an overcoat layer, which reduces stress on the poles. The process consists of depositing a seed layer over the overcoat layer before plating a metal mask layer with an opening for the recess. It also includes wet chemical etching of the seed layer through the mask opening and performing an ion milling process to eliminate any remaining traces of the seed layer. Once the seed layer is completely removed, a trench with smooth sidewalls and bottom is etched in the overcoat layer using a reactive ion etch (RIE) process. This innovative approach allows the saw used to separate the head elements in the wafer to pass through the clean trench without contacting the overcoat layer, thus avoiding potential chipping and cracking.

Career Highlights

Alan J Tam is currently employed at Hitachi Global Storage Technologies Netherlands B.V. His work at this company has been instrumental in advancing storage technology. He has demonstrated a strong commitment to innovation and excellence in his field.

Collaborations

Throughout his career, Alan has collaborated with talented individuals such as Yunxiao Gao and Aron Pentek. These collaborations have contributed to the success of his projects and the advancement of technology in data storage.

Conclusion

Alan J Tam is a distinguished inventor whose work in the fabrication of GMR heads has made a significant impact on the technology industry. His innovative methods and dedication to research continue to influence advancements in data storage solutions.