Company Filing History:
Years Active: 1998-2009
Title: Alan D Raisanen: Innovator in Semiconductor Technology
Introduction
Alan D Raisanen is a prominent inventor based in Sodus, NY (US), known for his significant contributions to semiconductor technology. With a total of 12 patents to his name, Raisanen has made a notable impact in the field of ion implantation methods.
Latest Patents
One of Raisanen's latest patents is focused on ion implantation with multiple concentration levels. This innovative method involves providing a semiconductor substrate that has a mask on its surface. The mask consists of a first region without masking elements and a second region containing multiple masking elements. Each of these masking elements has a dimension equal to a first length, which is less than twice the diffusion length of a dopant. The process includes bombarding the semiconductor substrate and the masking elements with ions of the dopant, resulting in a first impurity concentration in the first region and a second impurity concentration in the second region.
Career Highlights
Raisanen is currently employed at Xerox Corporation, where he continues to develop and refine his innovative techniques in semiconductor technology. His work has been instrumental in advancing the capabilities of ion implantation processes.
Collaborations
Throughout his career, Raisanen has collaborated with notable colleagues, including Cathie J Burke and Shelby Forrester Nelson. These partnerships have contributed to the successful development of his patented technologies.
Conclusion
Alan D Raisanen stands out as a key figure in the semiconductor industry, with a strong portfolio of patents that reflect his expertise and innovative spirit. His work continues to influence the field and drive advancements in technology.