RU

Al Suvorov

This inventor holds 0 USPTO granted patents, plus 1 CIPO patent.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Al Suvorov. Retrieved from https://idiyas.com/inventor/al-suvorov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

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Title: Al Suvorov - Innovator in Field Emission Technology

Introduction

Al Suvorov is a notable inventor based in Russia, recognized for his contributions to the field of emission technology. He has developed innovative methods for producing field emission cathodes, which are crucial components in various electronic devices. His work focuses on enhancing the efficiency and effectiveness of these cathodes.

Latest Patents

Al Suvorov holds a patent titled "A Field Emission Cathode And Methods In The Production Thereof." This patent describes an improved field emission cathode and the methods for fabricating such a cathode. The invention involves creating irregularities in the emitting surface of a body made from a first substance. The process includes adding ions of a second substance with a low work function to the emitting surface and modifying it by inducing field emission through a variable electric field, increasing the field strength in steps. Although he currently has 0 patents, his work in this area is significant.

Career Highlights

Al Suvorov is associated with Light-lab Ab, where he continues to explore advancements in field emission technology. His innovative approach has the potential to impact various applications in electronics and materials science.

Collaborations

Al has collaborated with notable colleagues, including Vs Kaftanov and Ep Sheshin, who share his passion for advancing technology in the field of emission cathodes.

Conclusion

Al Suvorov is a dedicated inventor whose work in field emission technology showcases his innovative spirit and commitment to improving electronic components. His contributions, although currently limited in patent count, are poised to influence future developments in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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