Ome, Japan

Akira Ootaguro

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Akira Ootaguro. Retrieved from https://idiyas.com/inventor/akira-ootaguro

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2011

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Akira Ootaguro: Innovator in Semiconductor Technology

Introduction

Akira Ootaguro is a notable inventor based in Ome, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for manufacturing semiconductor devices.

Latest Patents

Ootaguro holds a patent for a "Method of manufacturing semiconductor device having MIM capacitor." This invention focuses on optimizing the film thicknesses of upper barrier films in capacitive elements and metallic interconnect layers. By ensuring that the film thickness of the upper barrier film of the lower electrode is controlled to be 110 nm or more, and preferably 160 nm or more, the invention enhances the performance and capacitance of semiconductor devices. This innovation prevents a decrease in the dielectric voltage of the capacitive dielectric film due to cracks, allowing for higher deposition temperatures and improved dielectric voltage.

Career Highlights

Ootaguro is associated with Hitachi, Ltd., a leading company in technology and innovation. His work has been instrumental in advancing semiconductor manufacturing processes, contributing to the development of high-performance devices.

Collaborations

He has collaborated with notable colleagues, including Toshinori Imai and Tsuyoshi Fujiwara, to further enhance the research and development efforts in semiconductor technology.

Conclusion

Akira Ootaguro's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the development of high-performance semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…