Itami, Japan

Akira Ohisa

This inventor holds 1 USPTO granted patent. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Akira Ohisa. Retrieved from https://idiyas.com/inventor/akira-ohisa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Akira Ohisa: Semiconductor Interconnection Structures

Introduction

Akira Ohisa is an inventor associated with Itami, Japan, and Mitsubishi Denki Kabushiki Kaisha, commonly known as Mitsubishi Electric. The supplied information credits Ohisa with 1 patent.

Latest Patents

Ohisa’s listed patent, “Semiconductor Integrated Circuit Interconnection Structures,” describes a layered arrangement of insulating and conducting materials that connects electronic elements within a semiconductor substrate. Its design includes a current barrier formed by an opening in the first conducting interconnection layer, filled with material from the second insulating layer. This barrier constrains current to flow around the opening as it passes between the conducting layers.

Career Highlights

The available information identifies Ohisa’s work through this semiconductor interconnection patent and the association with Mitsubishi Electric. The patent focuses on controlling current flow within an integrated circuit’s interconnection structure.

Collaborations

The supplied data names Eisuke Tanaka and Hiroshi Mochizuki as Ohisa’s coworkers. It does not specify their roles in the patent or describe particular collaborative projects.

Conclusion

Akira Ohisa’s listed patent addresses a specific challenge in semiconductor circuit design by using a current barrier to guide flow between interconnection layers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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