Tokyo, Japan

Akira Hirako

USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Akira Hirako: Innovator in Semiconductor Technology

Introduction

Akira Hirako is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to light-emitting ceramic substrates.

Latest Patents

Hirako holds a patent for a light-emitting ceramic substrate that includes group-III nitride. This invention describes a semiconductor device where a YAG substrate is formed as a single-crystal substrate of various surface orientations, including (100), (110), and (111). The fabrication process involves feeding TMAl gas onto the YAG substrate to create a nucleation layer made of aluminum, a group-III element. Following this, NH gas is introduced to transform the nucleation layer's surface into a group-V element, leading to the formation of a group-III-V compound layer of AlN. A mixed gas of TMAl and NH gas is then applied to create another group-III-V compound layer, culminating in the crystal growth of a group-III nitride semiconductor layer on the compound layer.

Career Highlights

Throughout his career, Akira Hirako has worked with notable organizations, including Koito Manufacturing Company, Ltd. and Tokyo University of Science. His experience in these institutions has allowed him to refine his expertise in semiconductor technologies and contribute to advancements in the field.

Collaborations

Hirako has collaborated with esteemed colleagues, including Akihiro Nomura and Kazuhiro Ohkawa. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Akira Hirako's contributions to semiconductor technology, particularly through his patent on light-emitting ceramic substrates, highlight his role as an influential inventor in the field. His work continues to impact the development of advanced semiconductor devices.

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