Company Filing History:
1 out of 197 
1 out of 9 Years Active: 1991
Title: Akira Higuchi: Innovator in Silicon Crystal Growth
Introduction
Akira Higuchi is a notable inventor based in Omiya, Japan. He is recognized for his contributions to the field of silicon crystal growth, which is essential for various technological applications. His innovative methods have paved the way for advancements in semiconductor technology.
Latest Patents
Higuchi holds a patent for a method and apparatus for growing silicon crystals. This patent describes a silicon single-crystal growing method that involves immersing a seed crystal in a silicon melt and pulling the seed crystal from the melt to grow a silicon single-crystal. The method specifies that the dwelling time of the silicon single-crystal, while being pulled in a temperature range of 1,050°C to 850°C, should not exceed 140 minutes. The apparatus designed for this method includes a crucible, a pulling mechanism, and a temperature control shell, which cools the silicon single-crystal at a controlled rate.
Career Highlights
Throughout his career, Akira Higuchi has worked with prominent companies such as Mitsubishi Kinzoku Kabushiki Kaisha and Japan Silicon Co., Ltd. His experience in these organizations has contributed significantly to his expertise in silicon crystal growth.
Collaborations
Higuchi has collaborated with notable colleagues, including Ichiro Yamashita and Koutaro Shimizu. These partnerships have fostered a collaborative environment that enhances innovation in their field.
Conclusion
Akira Higuchi's work in silicon crystal growth exemplifies the impact of innovative thinking in technology. His patent and career achievements highlight his significant contributions to the industry.