Mitsubishi Kinzoku Kabushiki Kaisha

Japan Silicon Co., Ltd.

Akira Higuchi

Yasushi Shimanuki

Koutaro Shimizu

Ichiro Yamashita

Yoshiaki Banba

Hisashi Furuya

A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is set to be no longer than 140 min. The apparatus suitable for practicing the above method has a crucible, a pulling mechanism, and a temperature control shell. The temperature control shell is located above the crucible for cooling said silicon single-crystal at a cooling rate such that the dwelling time of said silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is not longer than 140 min.

Growing community of inventors

Omiya, Japan

Akira Higuchi