Location History:
- Hiroshima, JP (2004)
- Mihara, JP (2011)
Company Filing History:
Years Active: 2004-2011
Title: Akio Aioi: Innovator in Nitride Semiconductor Technology
Introduction
Akio Aioi is a prominent inventor based in Mihara, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting devices. With a total of 2 patents, Aioi's work focuses on enhancing the efficiency and longevity of nitride semiconductor devices.
Latest Patents
Aioi's latest patents include innovative designs for nitride semiconductor light-emitting devices. One of his patents describes a nitride semiconductor light-emitting device that comprises a substrate, a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer, and a second n-type nitride semiconductor layer. This configuration allows for efficient light extraction, with the metal layer preferably made of a hydrogen-storage alloy. Another patent details a semiconductor light-emitting device featuring a gallium nitride-based compound semiconductor layer. This device includes a second intermediate layer that enhances crystallinity and prevents cracks, ensuring a long-life and high-luminance output.
Career Highlights
Aioi is associated with Sharp Kabushiki Kaisha Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the performance of light-emitting devices, making them more efficient and reliable.
Collaborations
Aioi has collaborated with notable colleagues, including Norikatsu Koide and Takeshi Nishino. Their combined expertise has contributed to the successful development of innovative semiconductor technologies.
Conclusion
Akio Aioi's contributions to nitride semiconductor technology have positioned him as a key figure in the field. His patents reflect a commitment to innovation and efficiency in light-emitting devices.