The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Jan. 29, 2008
Atsushi Ogawa, Higashihiroshima, JP;
Akio Aioi, Mihara, JP;
Satoshi Komada, Mihara, JP;
Hiroshi Nakatsu, Amagasaki, JP;
Atsushi Ogawa, Higashihiroshima, JP;
Akio Aioi, Mihara, JP;
Satoshi Komada, Mihara, JP;
Hiroshi Nakatsu, Amagasaki, JP;
Sharp Kabushiki Kaisha, Osaka-shi, JP;
Abstract
A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.