Location History:
- Yokohama, JA (1976 - 1977)
- Yokohama all of, JP (1983)
- Yokohama, JP (1979 - 1993)
Company Filing History:
15 out of 52,751 
10 out of 2,916 
4 out of 681 
Years Active: 1976-1993
Title: Akihiko Tsuge: Innovator in Silicon Carbide Technology
Introduction
Akihiko Tsuge, based in Yokohama, Japan, is a prominent inventor known for his significant contributions to the field of silicon carbide (SiC) technology. With a remarkable portfolio of 29 patents, Tsuge has made strides in the development of advanced ceramic materials that are crucial for various industrial applications.
Latest Patents
Among his latest innovations, Tsuge has developed a SiC sintered body that contains 0.05-5 atom % Sc, with 10 atom % or less free carbon, 2 atom % or less oxygen, and a balance of SiC. Notably, 75% or more of the Sc is dissolved into the SiC grains, enhancing the material's properties. Additionally, he has patented an SiC-based pressureless sintered product that features additive grains from a selection including TaC, NbB2, VB2, and WB, ensuring that the maximum grain size does not exceed the average grain size of the SiC sintered grains. This innovation also includes a sintering assistant component, further contributing to its efficacy.
Career Highlights
Tsuge has worked at notable companies such as Kabushiki Kaisha Toshiba and Tokyo Shibaura Denki Kabushiki Kaisha. His career has been marked by a strong focus on advancing ceramics technology, making significant advancements that contribute to the efficiency and performance of materials used in electronics and other applications.
Collaborations
Throughout his professional journey, Akihiko Tsuge has collaborated with esteemed colleagues such as Katsutoshi Komeya and Hiroshi Inoue. Their joint efforts have led to innovative solutions in the realm of SiC technology, underscoring the importance of teamwork in the advancement of scientific research and development.
Conclusion
Akihiko Tsuge's enduring commitment to innovation and excellence in SiC technology places him at the forefront of material science. His contributions, as reflected in his impressive number of patents, continue to influence the industry and pave the way for future advancements in silicon carbide applications.