Hwaseong, South Korea

Ahn Sik Moon

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ahn Sik Moon. Retrieved from https://idiyas.com/inventor/ahn-sik-moon-b1htw6lk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Innovations by Ahn Sik Moon: A Semiconductor Device with Channel Holes

Introduction: Ahn Sik Moon, an inventive mind from Hwaseong-si, South Korea, has made a significant contribution to the field of semiconductor technology. With one patent to his name, his innovative work focuses on enhancing the performance of semiconductor devices. This article delves into his patent, career highlights, and collaborations within the industry.

Latest Patents: Ahn Sik Moon's notable patent is titled "Semiconductor device having channel holes." This invention features a semiconductor device that includes a gate stack with gate electrodes arranged vertically on a substrate. The unique design allows for channel holes that penetrate through the gate stack, extending vertically to the substrate. Each channel hole incorporates a channel region, which includes first channel pads and second channel pads. Notably, the first channel pads contain at least one first conductivity-type impurity, while the second channel pads house at least one second conductivity-type impurity. This innovative structure aims to optimize the functionality and efficiency of semiconductor devices.

Career Highlights: Ahn Sik Moon currently works at Samsung Electronics Co., Ltd., a leading global technology company renowned for its advancements in electronics and semiconductor manufacturing. His role allows him to engage in cutting-edge research and development efforts, contributing to the company's ongoing success in the tech industry.

Collaborations: Throughout his career, Ahn Sik Moon has collaborated with talented colleagues, including Sung Min Hwang and Jang Gn Yun. Their combined expertise fosters a creative environment that encourages groundbreaking innovations in semiconductor technology. Working alongside such skilled professionals enhances the potential for future advancements in their respective fields.

Conclusion: Ahn Sik Moon's invention of a semiconductor device featuring channel holes underscores the importance of innovation in the electronics sector. His contributions at Samsung Electronics Co., Ltd. demonstrate a commitment to pushing the boundaries of technology. As semiconductor devices continue to evolve, Ahn's work will undoubtedly influence the future of this essential industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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