Ahmed Nayaz Noemaun

Title: Ahmed Nayaz Noemaun: Innovator in DRAM Technology

Introduction

Ahmed Nayaz Noemaun is a notable inventor based in Beacon, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in dynamic random access memory (DRAM) systems. His innovative approach has led to advancements that enhance the performance and efficiency of DRAM cells.

Latest Patents

Ahmed Nayaz Noemaun holds a patent for an invention titled "Asymmetric stressor DRAM." This patent describes a stressor structure formed within a drain region of an access transistor in a DRAM cell on a semiconductor-on-insulator (SOI) substrate. The unique aspect of this invention is that it does not form any stressor structure in the source region of the DRAM cell. The stressor structure induces a stress gradient within the body region of the access transistor, resulting in a greater leakage current at the body-drain junction compared to the body-source junction. This design allows for a stronger coupling of the body potential of the access transistor to the drain voltage than to the source voltage. The process involves an asymmetric etch of a gate dielectric cap, the application of a planarization material layer, and a non-selective etch of both the planarization material layer and the gate dielectric cap to form the DRAM cell.

Career Highlights

Ahmed Nayaz Noemaun is currently employed at Globalfoundries Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing innovative solutions that address the challenges faced in modern memory systems.

Collaborations

Throughout his career, Ahmed has collaborated with talented individuals such as Ravi K Dasaka and Shreesh Narasimha. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Ahmed Nayaz Noemaun is a distinguished inventor whose work in DRAM technology has made a significant impact on the semiconductor industry. His innovative patent and collaborations with other experts highlight his commitment to advancing technology.