Austin, TX, United States of America

Ahmed Hossny Anis Elsamadouny


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Ahmed Hossny Anis Elsamadouny: Innovator in 5G Technology

Introduction

Ahmed Hossny Anis Elsamadouny is a prominent inventor based in Austin, TX (US). He has made significant contributions to the field of telecommunications, particularly in the development of efficient technologies for 5G networks. His innovative work focuses on enhancing data multiplexing and control mechanisms in next-generation devices.

Latest Patents

One of his notable patents is titled "Efficient engine and algorithm for control and data multiplexing/demultiplexing in 5G NR devices." This patent describes a method and apparatus for multiplexing data and uplink control bitstreams on a 5G-NR uplink. The invention involves generating a multiplexing configuration structure using processors and supplying data and control bitstreams to a multiplexing engine. The engine includes an index calculation logic circuit and a multiplex selector circuit, which work together to execute an iterative data-control multiplexing algorithm. This algorithm generates ordered selection indices, allowing for efficient output into a multiplexed stream.

Career Highlights

Ahmed is currently employed at NXP USA, Inc., where he continues to push the boundaries of technology in the telecommunications sector. His work is instrumental in advancing the capabilities of 5G devices, making them more efficient and reliable.

Collaborations

Throughout his career, Ahmed has collaborated with talented individuals such as Jayakrishnan Cheriyath Mundarath and Oded Yishay. These collaborations have fostered innovation and contributed to the success of various projects in the field.

Conclusion

Ahmed Hossny Anis Elsamadouny is a key figure in the advancement of 5G technology, with a focus on efficient data multiplexing. His contributions are shaping the future of telecommunications and enhancing the performance of next-generation devices.

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