Company Filing History:
Years Active: 2008-2016
Title: Agni Mitra: Innovator in Semiconductor Technology
Introduction
Agni Mitra is a prominent inventor based in Gilbert, AZ (US), known for her contributions to semiconductor technology. With a total of 6 patents to her name, she has made significant advancements in the field, particularly in the design and manufacturing of transistors.
Latest Patents
Among her latest patents is a method of manufacturing a device having a shield plate dopant region. This innovative approach involves forming a transistor that includes a surface region, a gate, a source dopant region, a drain dopant region, a drift dopant region, and a set of electrically conductive shield plates. The design ensures that a sidewall of the gate aligns with the drain side boundary of the surface region, optimizing the functionality of the device. Another notable patent is for a device having a shield plate dopant region and the method of manufacturing it. This patent outlines similar components and processes, emphasizing the importance of the shield plate dopant region in enhancing transistor performance.
Career Highlights
Agni Mitra is currently employed at Freescale Semiconductor, Inc., where she continues to push the boundaries of semiconductor innovation. Her work has been instrumental in developing advanced technologies that are crucial for modern electronic devices.
Collaborations
Throughout her career, Agni has collaborated with notable colleagues, including David Cobb Burdeaux and Darrell Glenn Hill. These partnerships have fostered a creative environment that has led to groundbreaking advancements in their field.
Conclusion
Agni Mitra's contributions to semiconductor technology through her patents and work at Freescale Semiconductor, Inc. highlight her role as a leading innovator in the industry. Her ongoing efforts continue to shape the future of electronic devices.