Nomi-shi, Ishikawa, Japan

Afsal Knareekunnan

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Otowa Electric Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Afsal Knareekunnan. Retrieved from https://idiyas.com/inventor/afsal-knareekunnan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Afsal Knareekunnan - Innovator in Sensor Technology

Introduction

Afsal Knareekunnan is an inventor based in Nomi-shi, Ishikawa, Japan. He is known for his innovative work in the field of sensor technology. His research focuses on developing devices that can measure electric field strength, which has significant applications in various industries.

Latest Patent Applications

Afsal Knareekunnan has filed a patent application for a sensor device capable of measuring electric field strength of an external electric field. The device includes a first dielectric layer, a first atomic layer material film, a channel layer with graphene, and electrodes that facilitate the measurement process. This invention aims to enhance the accuracy and efficiency of electric field measurements.

Conclusion

Afsal Knareekunnan's contributions to sensor technology highlight the importance of innovation in measuring external electric fields. His work has the potential to impact various sectors that rely on precise electric field measurements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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