Adam Jönsson

Title: Adam Jönsson and Semiconductor Innovation

Introduction

Adam Jönsson is an inventor based in Malmö, Sweden. His disclosed patent work concerns a semiconductor structure designed to form multiple transistors using vertical nanowires.

Latest Patents

Jönsson is associated with 1 patent, titled “Semiconductor Structure Forming a Plurality of Transistors.” The invention describes a source layer supporting multiple vertical nanowires, with spacer layers and gate structures arranged around them, and a drain layer contacting the nanowires. Its gate layer includes two interleaved gates, each with multiple gate fingers connected by an interconnecting portion. The gates serve as the gates of separate transistors.

Career Highlights

Jönsson works at C2amps AB. His patent describes an approach to arranging multiple transistor gates around vertical nanowires within a semiconductor structure.

Collaborations

His listed coworkers include Simon Olson and Tobias Tired.

Conclusion

Adam Jönsson’s disclosed invention focuses on a nanowire-based semiconductor structure that integrates interleaved gates to form multiple transistors.