Company Filing History:
Years Active: 2006
Title: The Innovative Contributions of Abigail Ebbing
Introduction
Abigail Ebbing is a notable inventor based in Danbury, CT (US). She has made significant contributions to the field of materials science, particularly in the development of organosilicon precursors for vapor deposition processes. Her work is characterized by a focus on creating low-k dielectric films, which are essential for advanced electronic applications.
Latest Patents
Abigail Ebbing holds a patent for "Ethyleneoxide-silane and bridged silane precursors for forming low k films." This invention pertains to an organosilicon precursor designed for vapor deposition, specifically low pressure (<100 Torr) and plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film. This innovation is crucial for enhancing the performance of electronic devices.
Career Highlights
Ebbing is currently employed at Advanced Technology Materials, Inc., where she continues to push the boundaries of materials innovation. Her work has been instrumental in advancing the technology used in semiconductor manufacturing and other high-tech industries.
Collaborations
Abigail has collaborated with esteemed colleagues such as Alexander S. Borovik and Chongying Xu. These partnerships have fostered a collaborative environment that enhances the research and development of new materials.
Conclusion
Abigail Ebbing's contributions to the field of materials science and her innovative patent demonstrate her commitment to advancing technology. Her work not only impacts the industry but also sets a precedent for future innovations in the field.