The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Jul. 15, 2003
Alexander S. Borovik, West Hartford, CT (US);
Chongying Xu, New Milford, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Steven Bilodeau, Oxford, CT (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Abigail Ebbing, Danbury, CT (US);
Daniel Vestyck, Danbury, CT (US);
Alexander S. Borovik, West Hartford, CT (US);
Chongying Xu, New Milford, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Steven Bilodeau, Oxford, CT (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Abigail Ebbing, Danbury, CT (US);
Daniel Vestyck, Danbury, CT (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: