Company Filing History:
Years Active: 2017
Title: Abhijit Mallik: Innovator in Tunnel Field-Effect Transistor Technology
Introduction
Abhijit Mallik is a notable inventor based in Sonarpur, India. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on tunnel field-effect transistors (TFETs). His research focuses on enhancing the performance and efficiency of electronic devices.
Latest Patents
Abhijit Mallik holds a patent for a tunnel field-effect transistor (TFET) with a supersteep sub-threshold swing. This technology relates to TFET structures that utilize a gate-on-germanium source (GoGeS) on a bulk silicon substrate, enabling operations below 0.5V. The GoGeS structure is designed to increase the tunneling area, which in turn enhances the ON-state current. To achieve a supersteep sub-threshold swing, the design suppresses both lateral tunneling due to the gate electric field and non-uniform tunneling at the gate edge through careful selection of component dimensions. The devices can be fabricated using CMOS technologies, incorporating selective etching in the process.
Career Highlights
Abhijit Mallik is affiliated with the University of Calcutta, where he continues to advance his research in semiconductor technologies. His work has garnered attention for its potential applications in low-power electronic devices.
Collaborations
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Conclusion
Abhijit Mallik's contributions to the field of tunnel field-effect transistors represent a significant advancement in semiconductor technology. His innovative approach and dedication to research continue to influence the development of more efficient electronic devices.