Montlhéry, France

Abdelhanin Aassime



Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):

Title: The Innovative Contributions of Abdelhanin Aassime

Introduction

Abdelhanin Aassime is a notable inventor based in Montlhéry, France. He has made significant contributions to the field of semiconductor technology, particularly with his innovative patent that addresses the structure of strained semiconductor layers.

Latest Patents

Aassime holds a patent for a "Structure comprising a strained semiconductor layer on a heat sink." This invention includes a semiconductor support, a semiconductor region overlying the semiconductor support, a silicon nitride layer that surrounds and strains the semiconductor region, and a metal foot that separates the silicon nitride layer from the semiconductor support. The semiconductor region incorporates germanium and can function as a resonator for a laser or a waveguide. He has 1 patent to his name.

Career Highlights

Throughout his career, Aassime has worked with prominent organizations such as STMicroelectronics and Université Paris-Saclay. His experience in these institutions has allowed him to develop and refine his expertise in semiconductor technologies.

Collaborations

Aassime has collaborated with talented individuals in his field, including Anas Elbaz and Moustafa El Kurdi. These partnerships have contributed to the advancement of his research and innovations.

Conclusion

Abdelhanin Aassime's work in semiconductor technology exemplifies the impact of innovative thinking in engineering. His contributions continue to influence the field and inspire future advancements.

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