The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2021

Filed:

Oct. 19, 2017
Applicants:

Centre National DE LA Recherche Scientifique, Paris, FR;

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Universite Paris-saclay, Saint-Aubin, FR;

Inventors:

Anas Elbaz, Savigny le temple, FR;

Moustafa El Kurdi, Cachan, FR;

Abdelhanin Aassime, Montlhéry, FR;

Philippe Boucaud, Paris, FR;

Frederic Boeuf, Le Versoud, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/024 (2006.01); H01S 5/02 (2006.01); H01S 5/10 (2021.01); H01S 5/30 (2006.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/02461 (2013.01); H01S 5/021 (2013.01); H01S 5/02469 (2013.01); H01S 5/1042 (2013.01); H01S 5/3027 (2013.01); H01S 5/3218 (2013.01); H01S 5/1075 (2013.01); H01S 5/3403 (2013.01); H01S 2301/176 (2013.01);
Abstract

A structure includes a semiconductor support, a semiconductor region overlying the semiconductor support, a silicon nitride layer surrounding and straining the semiconductor region, and a metal foot separating the silicon nitride layer from the semiconductor support. The semiconductor region includes germanium. The semiconductor region can be a resonator of a laser or a waveguide.


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