Sugar Land, TX, United States of America

Abbass Hassan

This inventor holds 1 USPTO granted patent. Top assignee: H R D Corporation. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Abbass Hassan. Retrieved from https://idiyas.com/inventor/abbass-hassan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Abbass Hassan: Innovator in Gas Reaction Technology

Introduction

Abbass Hassan is a notable inventor based in Sugar Land, Texas. He has made significant contributions to the field of gas reaction technology. His innovative approach has led to the development of a unique apparatus that enhances gas reactions.

Latest Patents

Abbass Hassan holds a patent for a "System and method for gas reaction." This invention features an apparatus with a first porous rotor positioned about an axis of rotation. The first porous rotor includes a first catalyst, and it is separated from an outer casing by an annular space. Additionally, a motor is configured to rotate the first porous rotor about the axis of rotation, optimizing the gas reaction process.

Career Highlights

Hassan is currently associated with H R D Corporation, where he applies his expertise in gas reaction technology. His work has been instrumental in advancing the capabilities of gas reaction systems. His dedication to innovation has positioned him as a key figure in his field.

Collaborations

Abbass Hassan collaborates with talented individuals such as Rayford Gaines Anthony and Aziz Hassan. Their combined efforts contribute to the success of projects at H R D Corporation.

Conclusion

Abbass Hassan's contributions to gas reaction technology exemplify the spirit of innovation. His patent and work at H R D Corporation highlight his commitment to advancing scientific understanding and practical applications in this area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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