Singapore, Singapore

Aaron Thean

USPTO Granted Patents = 1 

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations by Aaron Thean in Semiconductor Technology

Introduction

Aaron Thean is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He holds a patent that showcases his innovative approach to device architectures, particularly focusing on strained substrates. His work has implications for the development of advanced semiconductor structures.

Latest Patents

Aaron Thean's patent, titled "Device architectures with tensile and compressive strained substrates," presents a semiconductor structure that includes a base substrate and an insulating layer with a thickness ranging from about 5 nm to about 100 nm. The active layer consists of at least two pluralities of different volumes of semiconductor material, including silicon, germanium, and/or silicon germanium. This active layer is positioned over the insulating layer and features a first plurality of volumes with a tensile strain of at least about 0.6% and a second plurality with a compressive strain of at least about -0.6%. The patent also describes methods for preparing a semiconductor structure and a segmented strained silicon-on-insulator device.

Career Highlights

Throughout his career, Aaron Thean has worked with prestigious organizations, including the National University of Singapore and Soitec. His experience in these institutions has allowed him to refine his expertise in semiconductor technologies and contribute to significant advancements in the field.

Collaborations

Aaron has collaborated with notable colleagues such as Bich-Yen Nguyen and Christophe Maleville, enhancing his research and development efforts in semiconductor innovations.

Conclusion

Aaron Thean's work in semiconductor technology, particularly his patented innovations, demonstrates his significant impact on the field. His contributions continue to influence advancements in device architectures and strained substrates.

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