Company Filing History:
Years Active: 2002-2003
Title: Innovations of Aaron Lee in Shallow Trench Isolation Structures
Introduction
Aaron Lee is an accomplished inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of shallow trench isolation (STI) structures. With a total of 2 patents to his name, his work has been instrumental in advancing the efficiency and effectiveness of semiconductor manufacturing processes.
Latest Patents
Aaron Lee's latest patents focus on methods for forming shallow trench isolation structures. The first patent describes a process where a pad oxide layer is formed over a substrate, followed by the creation of a sacrificial layer and a mask layer. The mask layer is patterned, and the layers are etched in sequence to form a trench. A thermal oxidation process is then performed to create a liner layer along the exposed sidewalls of the sacrificial layer and the substrate surface inside the trench. Insulation material is deposited to fill the trench, and a chemical-mechanical polishing step is conducted to form an insulation plug inside the trench. The second patent follows a similar methodology but utilizes an amorphous silicon layer instead of a sacrificial layer, showcasing the versatility of his approach in STI structure formation.
Career Highlights
Aaron Lee is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to collaborate with other experts in the field and contribute to innovative solutions that enhance semiconductor fabrication techniques.
Collaborations
One of his notable collaborators is Shu-Ya Chuang, with whom he has worked closely on various projects related to semiconductor technology. Their partnership has led to advancements in the methods used for forming shallow trench isolation structures.
Conclusion
Aaron Lee's contributions to the field of semiconductor technology, particularly through his patents on shallow trench isolation structures, highlight his innovative spirit and dedication to advancing the industry. His work continues to influence the development of more efficient semiconductor manufacturing processes.