For the Inventor, By the Inventor

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Seongnam-si Gyeonggi-do, South Korea

Nemostech Co., Ltd.

USPTO Granted Patents = 3

Forward Citations = 1

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5 inventors (with patents filed for the assignee):

Man Seok Soh (1 out of 1 patent)

Hoon Mo Yoon (1 out of 1 patent)

Jong Cheol Lee (1 out of 22 patents)

4. Tae Gyoung Kang (1 out of 4 patents)

5. Hae Uk Lee (1 out of 1 patent)

3 patents: Sort by Forward Citations

1. 9324445 - High-voltage switching circuit for flash memory device (2016-04-26),

2. 9117539 - Flash memory device reducing noise peak and program time and programming method thereof (2015-08-25),

3. 9087589 - Flash memory device reducing layout area (2015-07-21),

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USPTO Data Jan 1 1976 - Jan 6 2026

3 Patents

#14 in Seongnam-si Gyeonggi-do

#2,649 in South Korea

Seongnam-si Gyeonggi-do, South Korea

Nemostech Co., Ltd.

Forward Citations = 1

5 inventors:

Man Seok Soh (1 out of 1 patent)

Hoon Mo Yoon (1 out of 1 patent)

Jong Cheol Lee (1 out of 22 patents)

4. Tae Gyoung Kang (1 out of 4 patents)

5. Hae Uk Lee (1 out of 1 patent)

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