For the Inventor, By the Inventor

Enter assignee name

New Taipei City, Taiwan

Nami Mos Co., Ltd.

USPTO Granted Patents = 2

Forward Citations = 0

Loading Chart...

Loading Chart...

2 inventors (with patents filed for the assignee):

Lin Xu (2 out of 9 patents)

Fu-yuan Hsieh (2 out of 2 patents)

2 patents: Sort by Forward Citations

1. 12677450 - SiC MOSFETs with saturation current pinching structures (2026-07-07),

2. 12604505 - SiC trench MOSFET with an embedded junction barrier Schottky diode (2026-04-14),

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

2 Patents

#857 in New Taipei City

#4,245 in Taiwan

New Taipei City, Taiwan

Nami Mos Co., Ltd.

Forward Citations = 0

2 inventors:

Lin Xu (2 out of 9 patents)

Fu-yuan Hsieh (2 out of 2 patents)

Please report any incorrect information to [email protected]

Loading…