Forward Citations = 7

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5 inventors (with patents filed for the assignee):

Sungsoo Chi (2 out of 22 patents)

Ling-Yi Chuang (1 out of 24 patents)

Feng Wu (1 out of 16 patents)

4. Liyuan Hu (1 out of 1 patent)

5. Sang Yeol Park (1 out of 1 patent)

5 patents: Sort by Forward Citations

1. 11622488 - Semiconductor structure and manufacturing method thereof (2023-04-04),

2. 11594264 - Readout circuit layout structure and method of reading data (2023-02-28),

3. 11586118 - Alignment mark evaluation method and alignment mark evaluation system (2023-02-21),

4. 11581034 - Sense amplification circuit and method of reading out data (2023-02-14),

5. 11488917 - Semiconductor structure and manufacturing method thereof (2022-11-01),

Company Overview

Ghangxin Memory Technologies, Inc. is a leading provider of advanced memory solutions for a wide range of industries. With a focus on innovation and quality, the company offers cutting-edge products that drive performance and efficiency. Ghangxin's team of experts is dedicated to delivering reliable and cost-effective memory solutions to meet the evolving needs of the market.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 13 2026

5 Patents

#46 in Hefei

#5,255 in China

Hefei, China

Ghangxin Memory Technologies, Inc.

Forward Citations = 7

5 inventors:

Sungsoo Chi (2 out of 22 patents)

Ling-Yi Chuang (1 out of 24 patents)

Feng Wu (1 out of 16 patents)

4. Liyuan Hu (1 out of 1 patent)

5. Sang Yeol Park (1 out of 1 patent)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Ghangxin Memory Technologies, Inc.. Retrieved from https://idiyas.com/company/ghangxin-memory-technologies

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]