The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2023
Filed:
Jul. 01, 2020
Applicant:
Soitec, Bernin, FR;
Inventors:
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 3/02 (2005.12); H03H 3/08 (2005.12); H01L 23/06 (2005.12); H01L 41/04 (2005.12); H01L 21/306 (2005.12); H01L 21/762 (2005.12); H01L 23/66 (2005.12); H01L 21/322 (2005.12);
U.S. Cl.
CPC ...
H03H 3/08 (2012.12); H01L 23/66 (2012.12); H01L 21/306 (2012.12); H01L 21/3226 (2012.12); H01L 21/76251 (2012.12); H01L 41/042 (2012.12); H03H 3/02 (2012.12);
Abstract
A structure for radiofrequency applications includes: a support substrate of high-resistivity silicon comprising a lower part and an upper part having undergone a p-type doping to a depth D; a mesoporous trapping layer of silicon formed in the doped upper part of the support substrate. The depth D is less than 1 micron and the trapping layer has a porosity rate of between 20% and 60%.