The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2011
Filed:
Nov. 09, 2010
Applicants:
Fang-wen Tsai, Hsinchu, TW;
Kuan-chen Wang, Hsinchu, TW;
Keng-chu Lin, Chaojhou Township, Pingtung County, TW;
Chih-lung Lin, Taipei, TW;
Shwang-ming Jeng, Hsinchu, TW;
Inventors:
Fang-Wen Tsai, Hsinchu, TW;
Kuan-Chen Wang, Hsinchu, TW;
Keng-Chu Lin, Chaojhou Township, Pingtung County, TW;
Chih-Lung Lin, Taipei, TW;
Shwang-Ming Jeng, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2005.12); H01L 23/48 (2005.12); H01L 29/40 (2005.12);
U.S. Cl.
CPC ...
Abstract
An extreme low-k (ELK) dielectric film scheme for advanced interconnects includes an upper ELK dielectric layer and a lower ELK dielectric with different refractive indexes. The refractive index of the upper ELK dielectric layer is greater than the refractive index of the lower ELK dielectric layer.