The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2010
Filed:
Jan. 19, 2000
Applicants:
Loi Nguyen, Carrollton, TX (US);
Ravishankar Sundaresan, Plano, TX (US);
Inventors:
Loi Nguyen, Carrollton, TX (US);
Ravishankar Sundaresan, Plano, TX (US);
Assignee:
STMicroelectronics, Inc., Carrollton, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/34 (2005.12); H01L 23/522 (2005.12); H01L 23/48 (2005.12); H01L 21/3105 (2005.12); H01L 21/8244 (2005.12); H01L 21/70 (2005.12); H01L 21/02 (2005.12);
U.S. Cl.
CPC ...
Abstract
A 4-T SRAM cell in which two layers of permanent SOG (with an intermediate oxide layer) are used to provide planarization between the first and topmost poly layers.
Nguyen, Loi. (2010). Sram cell fabrication with interlevel dielectric planarization (U.S. Patent No. RE41670). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/RE41670
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile