The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2018

Filed:

Feb. 08, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Jung-Huei Peng, Jhubei, TW;

Chia-Hua Chu, Zhubei, TW;

Chun-wen Cheng, Zhubei, TW;

Chin-Yi Cho, Kaohsiung, TW;

Li-Min Hung, Longtan Township, TW;

Yao-Te Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 31/00 (2006.01); B81C 1/00 (2006.01); H04R 19/00 (2006.01); H04R 19/04 (2006.01);
U.S. Cl.
CPC ...
H04R 31/003 (2013.01); B81C 1/00158 (2013.01); H04R 31/006 (2013.01); B81C 2201/013 (2013.01); B81C 2201/0125 (2013.01); B81C 2201/053 (2013.01); B81C 2203/036 (2013.01); H04R 19/005 (2013.01); H04R 19/04 (2013.01); H04R 2201/003 (2013.01); H04R 2307/027 (2013.01);
Abstract

The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.


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