The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Aug. 30, 2015
Global Unichip Corporation, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
GLOBAL UNICHIP CORPORATION, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A diode includes a substrate, a first insulating layer, a second insulating layer, a well, a deep doped region, a first doped region, and a second doped region. The first insulating layer is disposed on the substrate. The second insulating layer is disposed on the substrate, and defines a cell region with the first insulating layer. The well is disposed on the substrate and beneath the cell region. The deep doped region is disposed in the well and beneath the cell region. The first doped region is disposed in the cell region and on the deep doped region. The second doped region is disposed adjacent to the first doped region. The second doped region is disposed on the deep doped region, and is electrically isolated from the well through the deep doped region and the first doped region.